BSC090N03MSGATMA1 Infineon Technologies
auf Bestellung 4515 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1412+ | 0.40 EUR |
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Technische Details BSC090N03MSGATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 12A/48A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 32W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TDSON-8-5, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V.
Weitere Produktangebote BSC090N03MSGATMA1 nach Preis ab 0.51 EUR bis 0.51 EUR
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BSC090N03MSGATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC090N03MSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC090N03MSGATMA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M |
auf Bestellung 306 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC090N03MSGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 12A/48A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 32W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-5 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V |
Produkt ist nicht verfügbar |
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BSC090N03MSGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 12A/48A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 32W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-5 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V |
Produkt ist nicht verfügbar |