BSC0910NDIATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 25V 11A/31A TISON8
Part Status: Active
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Drain to Source Voltage (Vdss): 25V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Technische Details BSC0910NDIATMA1 Infineon Technologies
Description: MOSFET 2N-CH 25V 11A/31A TISON8, Part Status: Active, Supplier Device Package: PG-TISON-8, Vgs(th) (Max) @ Id: 2V @ 250µA, FET Feature: Logic Level Gate, 4.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V, Current - Continuous Drain (Id) @ 25°C: 11A, 31A, Drain to Source Voltage (Vdss): 25V, Power - Max: 1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Asymmetrical, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSC0910NDIATMA1 nach Preis ab 1.33 EUR bis 4.08 EUR
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BSC0910NDIATMA1 | Infineon Technologies |
MOSFETs TRENCH <= 40V |
auf Bestellung 3430 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC0910NDIATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 25V 11A/31A TISON8 Part Status: Active Supplier Device Package: PG-TISON-8 Vgs(th) (Max) @ Id: 2V @ 250µA FET Feature: Logic Level Gate, 4.5V Drive Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V Current - Continuous Drain (Id) @ 25°C: 11A, 31A Drain to Source Voltage (Vdss): 25V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 10182 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BSC0910NDIATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs TRENCH <= 40V
MOSFETs TRENCH <= 40V
auf Bestellung 3430 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.4 EUR |
| 10+ | 2.8 EUR |
| 25+ | 2.6 EUR |
| 100+ | 1.95 EUR |
| 500+ | 1.57 EUR |
| 5000+ | 1.33 EUR |
| BSC0910NDIATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 25V 11A/31A TISON8
Part Status: Active
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Drain to Source Voltage (Vdss): 25V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 25V 11A/31A TISON8
Part Status: Active
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Drain to Source Voltage (Vdss): 25V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 10182 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.08 EUR |
| 10+ | 2.77 EUR |
| 100+ | 1.9 EUR |
| 500+ | 1.53 EUR |
| 1000+ | 1.44 EUR |