BSC0911NDATMA1 Infineon Technologies

Description: MOSFET 2N-CH 25V 18A/30A TISON8, Part Status: Active, Supplier Device Package: PG-TISON-8, Vgs(th) (Max) @ Id: 2V @ 250µA, FET Feature: Logic Level Gate, 4.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V, Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 12V, Current - Continuous Drain (Id) @ 25°C: 18A, 30A, Drain to Source Voltage (Vdss): 25V, Power - Max: 1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Asymmetrical, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).