BSC0921NDIATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 3.27 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1 EUR |
| 2500+ | 0.99 EUR |
| 5000+ | 0.95 EUR |
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Technische Details BSC0921NDIATMA1 Infineon Technologies
Description: MOSFET 2N-CH 30V 17A/31A TISON8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 17A, 31A, Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 15V, Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V, FET Feature: Logic Level Gate, 4.5V Drive, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TISON-8, Part Status: Active.
Weitere Produktangebote BSC0921NDIATMA1 nach Preis ab 1 EUR bis 3.41 EUR
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BSC0921NDIATMA1 | Infineon Technologies |
 Description: MOSFET 2N-CH 30V 17A/31A TISON8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A, 31A Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TISON-8 Part Status: Active |
auf Bestellung 6752 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSC0921NDIATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 17A/31A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 31A
Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
Description: MOSFET 2N-CH 30V 17A/31A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 31A
Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
auf Bestellung 6752 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.41 EUR |
| 10+ | 2.17 EUR |
| 100+ | 1.47 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1.07 EUR |
| 2000+ | 1 EUR |