BSC100N03MSGATMA1 Infineon Technologies
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.38 EUR |
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Technische Details BSC100N03MSGATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 12A/44A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TDSON-8-5, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V.
Weitere Produktangebote BSC100N03MSGATMA1 nach Preis ab 0.28 EUR bis 1.33 EUR
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BSC100N03MSGATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC100N03MSGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 12A/44A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-5 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC100N03MSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R |
auf Bestellung 3733 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC100N03MSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R |
auf Bestellung 5004 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC100N03MSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R |
auf Bestellung 3733 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC100N03MSGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 12A/44A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-5 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V |
auf Bestellung 44211 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC100N03MSGATMA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M |
auf Bestellung 18594 Stücke: Lieferzeit 14-28 Tag (e) |
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BSC100N03MSGATMA1 | Hersteller : INFINEON |
Description: INFINEON - BSC100N03MSGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 44 A, 0.0083 ohm, TDSON, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 44A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 30W Anzahl der Pins: 8Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0083ohm |
auf Bestellung 3454 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC100N03MSGATMA1 | Hersteller : INFINEON |
Description: INFINEON - BSC100N03MSGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 44 A, 0.0083 ohm, TDSON, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 44A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 30W Anzahl der Pins: 8Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0083ohm |
auf Bestellung 3454 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC100N03MSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC100N03MSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R |
Produkt ist nicht verfügbar |
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BSC100N03MSGATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 28A Pulsed drain current: 176A Power dissipation: 30W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 5.8nC Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BSC100N03MSGATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 28A Pulsed drain current: 176A Power dissipation: 30W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 5.8nC Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |