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BSC110N15NS5SCATMA1

BSC110N15NS5SCATMA1 Infineon Technologies

Infineon-BSC110N15NS5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183d5a69a2931d9 Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 38A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 75 V
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+4.47 EUR
Mindestbestellmenge: 4000
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Technische Details BSC110N15NS5SCATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 38A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4.6V @ 91µA, Supplier Device Package: PG-TDSON-8-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 75 V.

Weitere Produktangebote BSC110N15NS5SCATMA1 nach Preis ab 4.47 EUR bis 9.18 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BSC110N15NS5SCATMA1 BSC110N15NS5SCATMA1 Hersteller : Infineon Technologies Infineon_BSC110N15NS5SC_DataSheet_v02_01_EN-3360854.pdf MOSFET TRENCH >=100V
auf Bestellung 3655 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+9.13 EUR
10+ 7.67 EUR
25+ 7.23 EUR
100+ 6.21 EUR
250+ 5.85 EUR
500+ 5.51 EUR
1000+ 4.71 EUR
Mindestbestellmenge: 6
BSC110N15NS5SCATMA1 BSC110N15NS5SCATMA1 Hersteller : Infineon Technologies Infineon-BSC110N15NS5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183d5a69a2931d9 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 38A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 75 V
auf Bestellung 6240 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.18 EUR
10+ 7.71 EUR
100+ 6.23 EUR
500+ 5.54 EUR
1000+ 4.75 EUR
2000+ 4.47 EUR
Mindestbestellmenge: 3
BSC110N15NS5SCATMA1 Hersteller : Infineon Technologies infineon-bsc110n15ns5sc-datasheet-v02_01-en.pdf SP005561075
Produkt ist nicht verfügbar
BSC110N15NS5SCATMA1 BSC110N15NS5SCATMA1 Hersteller : Infineon Technologies infineon-bsc110n15ns5sc-datasheet-v02_01-en.pdf Trans MOSFET N-CH 150V 77A 8-Pin WSON EP T/R
Produkt ist nicht verfügbar