BSC118N10NS G Infineon Technologies
auf Bestellung 4373 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.83 EUR |
| 10+ | 1.83 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.88 EUR |
| 5000+ | 0.86 EUR |
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Technische Details BSC118N10NS G Infineon Technologies
Description: BSC118N10 - 12V-300V N-CHANNEL P, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc), Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 4V @ 70µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V.
Weitere Produktangebote BSC118N10NS G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| BSC118N10NSG | Hersteller : Infineon technologies |
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auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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BSC118N10NSG | Hersteller : Infineon Technologies |
Description: BSC118N10 - 12V-300V N-CHANNEL P Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V |
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