BSC118N10NSGATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 11A/71A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V
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Technische Details BSC118N10NSGATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 11A/71A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc), Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 4V @ 70µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V.
Weitere Produktangebote BSC118N10NSGATMA1 nach Preis ab 0.98 EUR bis 3.06 EUR
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BSC118N10NSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 11A/71A TDSON Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TDSON-8-1 Vgs(th) (Max) @ Id: 4V @ 70µA Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 11484 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSC118N10NSGATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 11A/71A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 4V @ 70µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 11A/71A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 4V @ 70µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 11484 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.06 EUR |
| 10+ | 1.95 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.98 EUR |