BSC118N10NSGATMA1 Infineon Technologies
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.37 EUR |
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Technische Details BSC118N10NSGATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 11A/71A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc), Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 4V @ 70µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V.
Weitere Produktangebote BSC118N10NSGATMA1 nach Preis ab 0.37 EUR bis 3.08 EUR
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BSC118N10NSGATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 100V 11A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC118N10NSGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 11A/71A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC118N10NSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 11A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC118N10NSGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 11A/71A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V |
auf Bestellung 11484 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC118N10NSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 11A Automotive 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC118N10NSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 11A 8-Pin TDSON EP T/R |
Produkt ist nicht verfügbar |
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BSC118N10NSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 11A 8-Pin TDSON EP T/R |
Produkt ist nicht verfügbar |
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BSC118N10NSGATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8 Mounting: SMD Power dissipation: 114W Polarisation: unipolar Technology: OptiMOS™ 2 Kind of channel: enhancement Gate-source voltage: ±20V Case: PG-TDSON-8 Drain-source voltage: 100V Drain current: 71A On-state resistance: 11.8mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC118N10NSGATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8 Mounting: SMD Power dissipation: 114W Polarisation: unipolar Technology: OptiMOS™ 2 Kind of channel: enhancement Gate-source voltage: ±20V Case: PG-TDSON-8 Drain-source voltage: 100V Drain current: 71A On-state resistance: 11.8mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |