Technische Details BSC120N03MSGATMA1 Infineon Technologies
Description: INFINEON - BSC120N03MSGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 39 A, 0.012 ohm, PG-TDSON, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 39A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1V, euEccn: NLR, Verlustleistung: 28W, Bauform - Transistor: PG-TDSON, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.012ohm, SVHC: No SVHC (21-Jan-2025).
Weitere Produktangebote BSC120N03MSGATMA1 nach Preis ab 0.27 EUR bis 1.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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BSC120N03MSGATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 30V 11A/39A TDSONVgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 39A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-5 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC120N03MSGATMA1 | Infineon Technologies |
MOSFETs N-Ch 30V 39A TDSON-8 OptiMOS 3M |
auf Bestellung 5945 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC120N03MSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 11A/39A TDSON Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-5 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 39A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 20099 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC120N03MSGATMA1 | INFINEON |
Description: INFINEON - BSC120N03MSGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 39 A, 0.012 ohm, PG-TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 39A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 28W Bauform - Transistor: PG-TDSON Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.012ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 6933 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSC120N03MSGATMA1 | Infineon Technologies |
Trans MOSFET N-CH 30V 11A 8-Pin TDSON EP T/R |
auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSC120N03MSGATMA1 | Infineon Technologies |
Trans MOSFET N-CH 30V 11A 8-Pin TDSON EP T/R |
auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 38 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BSC120N03MSGATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 11A/39A TDSON
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Description: MOSFET N-CH 30V 11A/39A TDSON
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.3 EUR |
| 10000+ | 0.28 EUR |
| 15000+ | 0.27 EUR |
| BSC120N03MSGATMA1 |
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Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 39A TDSON-8 OptiMOS 3M
MOSFETs N-Ch 30V 39A TDSON-8 OptiMOS 3M
auf Bestellung 5945 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.59 EUR |
| 10+ | 0.44 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.28 EUR |
| 5000+ | 0.27 EUR |
| BSC120N03MSGATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 11A/39A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 11A/39A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 20099 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 1.32 EUR |
| 22+ | 0.82 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.37 EUR |
| 2000+ | 0.34 EUR |
| BSC120N03MSGATMA1 |
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Hersteller: INFINEON
Description: INFINEON - BSC120N03MSGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 39 A, 0.012 ohm, PG-TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 39A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1V
euEccn: NLR
Verlustleistung: 28W
Bauform - Transistor: PG-TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.012ohm
SVHC: No SVHC (21-Jan-2025)
Description: INFINEON - BSC120N03MSGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 39 A, 0.012 ohm, PG-TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 39A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1V
euEccn: NLR
Verlustleistung: 28W
Bauform - Transistor: PG-TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.012ohm
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 6933 Stücke:
Lieferzeit 14-21 Tag (e)
| BSC120N03MSGATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 11A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 30V 11A 8-Pin TDSON EP T/R
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
| BSC120N03MSGATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 11A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 30V 11A 8-Pin TDSON EP T/R
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)