BSC123N08NS3GATMA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 220+ | 0.81 EUR |
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Technische Details BSC123N08NS3GATMA1 Infineon Technologies
Description: INFINEON - BSC123N08NS3GATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 55 A, 0.0123 ohm, PG-TDSON, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 80V, rohsCompliant: YES, Dauer-Drainstrom Id: 55A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 2.8V, Verlustleistung: 66W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: PG-TDSON, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.0123ohm.
Weitere Produktangebote BSC123N08NS3GATMA1 nach Preis ab 0.84 EUR bis 5.25 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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BSC123N08NS3GATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 80V 11A/55A TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 33A, 10V Power Dissipation (Max): 2.5W (Ta), 66W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 33µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 40 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC123N08NS3GATMA1 | Infineon Technologies |
Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC123N08NS3GATMA1 | Infineon Technologies |
Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC123N08NS3GATMA1 | Infineon Technologies |
MOSFETs N-Ch 80V 55A TDSON-8 OptiMOS 3 |
auf Bestellung 44563 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC123N08NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 11A/55A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 33A, 10V Power Dissipation (Max): 2.5W (Ta), 66W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 33µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 40 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC123N08NS3GATMA1 | INFINEON |
Description: INFINEON - BSC123N08NS3GATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 55 A, 0.0123 ohm, PG-TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 55A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 2.8V Verlustleistung: 66W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PG-TDSON Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.0123ohm |
auf Bestellung 1813 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC123N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Power dissipation: 66W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 55A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 12.3mΩ |
auf Bestellung 4920 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BSC123N08NS3GATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 11A/55A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 40 V
Description: MOSFET N-CH 80V 11A/55A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 40 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.84 EUR |
| BSC123N08NS3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.93 EUR |
| BSC123N08NS3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.93 EUR |
| BSC123N08NS3GATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 80V 55A TDSON-8 OptiMOS 3
MOSFETs N-Ch 80V 55A TDSON-8 OptiMOS 3
auf Bestellung 44563 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.25 EUR |
| 10+ | 1.55 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.08 EUR |
| 1000+ | 1.06 EUR |
| 5000+ | 0.86 EUR |
| BSC123N08NS3GATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 11A/55A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 40 V
Description: MOSFET N-CH 80V 11A/55A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 40 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.52 EUR |
| 10+ | 2.23 EUR |
| 50+ | 1.67 EUR |
| 100+ | 1.49 EUR |
| 500+ | 1.18 EUR |
| BSC123N08NS3GATMA1 |
|
Hersteller: INFINEON
Description: INFINEON - BSC123N08NS3GATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 55 A, 0.0123 ohm, PG-TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 55A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2.8V
Verlustleistung: 66W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PG-TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0123ohm
Description: INFINEON - BSC123N08NS3GATMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 55 A, 0.0123 ohm, PG-TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 55A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2.8V
Verlustleistung: 66W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PG-TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0123ohm
auf Bestellung 1813 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 5.25 EUR |
| 89+ | 2.62 EUR |
| 116+ | 1.86 EUR |
| 500+ | 1.48 EUR |
| 1000+ | 1.31 EUR |
| BSC123N08NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Power dissipation: 66W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 55A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Power dissipation: 66W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 55A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
auf Bestellung 4920 Stücke:
Lieferzeit 14-21 Tag (e)