Weitere Produktangebote BSC196N10NSGATMA1 nach Preis ab 0.61 EUR bis 2.75 EUR
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BSC196N10NSGATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 100V 8.5A 8-Pin TDSON EP T/R |
auf Bestellung 15314 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC196N10NSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 8.5A 8-Pin TDSON EP T/R |
auf Bestellung 44616 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC196N10NSGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 8.5A/45A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 19.6mOhm @ 45A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 42µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V |
auf Bestellung 4915 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC196N10NSGATMA1 | Hersteller : INFINEON |
Description: INFINEON - BSC196N10NSGATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 45 A, 0.0196 ohm, PG-TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 45A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 78W Bauform - Transistor: PG-TDSON Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0196ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 1730 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC196N10NSGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 8.5A/45A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 19.6mOhm @ 45A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 42µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V |
Produkt ist nicht verfügbar |
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BSC196N10NSGATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 78W; PG-TDSON-8 Mounting: SMD On-state resistance: 19.6mΩ Drain current: 45A Gate-source voltage: ±20V Power dissipation: 78W Drain-source voltage: 100V Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Case: PG-TDSON-8 Polarisation: unipolar |
Produkt ist nicht verfügbar |