BSC220N20NSFDATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 200V 52A TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 52A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 137µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 100 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 3.72 EUR |
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Technische Details BSC220N20NSFDATMA1 Infineon Technologies
Description: MOSFET N-CH 200V 52A TSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 52A, 10V, Power Dissipation (Max): 214W (Tc), Vgs(th) (Max) @ Id: 4V @ 137µA, Supplier Device Package: PG-TSON-8-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 100 V.
Weitere Produktangebote BSC220N20NSFDATMA1 nach Preis ab 3.87 EUR bis 8.01 EUR
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BSC220N20NSFDATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 52A TSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 52A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 137µA Supplier Device Package: PG-TSON-8-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 100 V |
auf Bestellung 11250 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC220N20NSFDATMA1 | Hersteller : Infineon Technologies |
MOSFET TRENCH >=100V |
auf Bestellung 14279 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC220N20NSFDATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 52A 8-Pin TSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |