| Anzahl | Preis |
|---|---|
| 1+ | 8.01 EUR |
| 10+ | 5.6 EUR |
| 100+ | 4.17 EUR |
| 500+ | 3.91 EUR |
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Technische Details BSC430N25NSFDATMA1 Infineon Technologies
Description: MOSFET N-CH 250V TSON-8, Vgs (Max): ±20V, Part Status: Active, Supplier Device Package: PG-TSON-8-3, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 250 V.
Weitere Produktangebote BSC430N25NSFDATMA1 nach Preis ab 5.37 EUR bis 8.06 EUR
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BSC430N25NSFDATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 250V TSON-8Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-TSON-8-3 Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 82 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSC430N25NSFDATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V TSON-8
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 250V TSON-8
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.06 EUR |
| 10+ | 5.37 EUR |