BSC500N20NS3GATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 200V 24A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 22A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 100 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 1.52 EUR |
| 10000+ | 1.47 EUR |
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Technische Details BSC500N20NS3GATMA1 Infineon Technologies
Description: MOSFET N-CH 200V 24A TDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 22A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 4V @ 60µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 100 V.
Weitere Produktangebote BSC500N20NS3GATMA1 nach Preis ab 1.58 EUR bis 3.52 EUR
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BSC500N20NS3GATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 24A TDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 22A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 60µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 100 V |
auf Bestellung 15523 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC500N20NS3GATMA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 200V 24A TDSON-8 |
auf Bestellung 3218 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC500N20NS3GATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 24A 8-Pin TDSON EP T/R |
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BSC500N20NS3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 200V Drain current: 24A Power dissipation: 96W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC500N20NS3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 200V Drain current: 24A Power dissipation: 96W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |