BSC900N20NS3GATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 15.2A TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 4V @ 30µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Technische Details BSC900N20NS3GATMA1 Infineon Technologies
Description: MOSFET N-CH 200V 15.2A TDSON-8, Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TDSON-8-5, Vgs(th) (Max) @ Id: 4V @ 30µA, Power Dissipation (Max): 62.5W (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 7.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSC900N20NS3GATMA1 nach Preis ab 1.07 EUR bis 3.61 EUR
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BSC900N20NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 200V 15.2A TDSON-8 Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TDSON-8-5 Vgs(th) (Max) @ Id: 4V @ 30µA Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 7.6A, 10V Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 5089 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BSC900N20NS3GATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 15.2A TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 4V @ 30µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 200V 15.2A TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 4V @ 30µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 5089 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.61 EUR |
| 10+ | 2.31 EUR |
| 100+ | 1.57 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.16 EUR |
| 2000+ | 1.07 EUR |