BSDH10G65E2 Bourns Inc.
Hersteller: Bourns Inc.
Description: DIODE SIC 650V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 323pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
| Anzahl | Preis |
|---|---|
| 4+ | 4.77 EUR |
| 50+ | 3.79 EUR |
| 100+ | 3.25 EUR |
| 500+ | 2.89 EUR |
| 1000+ | 2.47 EUR |
| 2000+ | 2.33 EUR |
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Technische Details BSDH10G65E2 Bourns Inc.
Description: DIODE SIC 650V 10A TO220-2, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 323pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Weitere Produktangebote BSDH10G65E2 nach Preis ab 2.39 EUR bis 6.11 EUR
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BSDH10G65E2 | Bourns |
SiC Schottky Diodes 650V 10A High Surge SiC diode in TO220-2 |
auf Bestellung 2868 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSDH10G65E2 |
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Hersteller: Bourns
SiC Schottky Diodes 650V 10A High Surge SiC diode in TO220-2
SiC Schottky Diodes 650V 10A High Surge SiC diode in TO220-2
auf Bestellung 2868 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 6.11 EUR |
| 10+ | 2.39 EUR |