BSDH10S65E6 Bourns Inc.
Hersteller: Bourns Inc.
Description: DIODE SCHOT SIC 650V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
| Anzahl | Preis |
|---|---|
| 4+ | 5.65 EUR |
| 50+ | 4.48 EUR |
| 100+ | 3.84 EUR |
| 500+ | 3.41 EUR |
| 1000+ | 2.92 EUR |
| 2000+ | 2.75 EUR |
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Technische Details BSDH10S65E6 Bourns Inc.
Description: DIODE SCHOT SIC 650V 10A TO220-2, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 500pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Weitere Produktangebote BSDH10S65E6 nach Preis ab 2.82 EUR bis 6.93 EUR
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BSDH10S65E6 | Bourns |
SiC Schottky Diodes 650V 10A Low Vf SiC schottky diode in TO220-2 |
auf Bestellung 2970 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSDH10S65E6 |
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Hersteller: Bourns
SiC Schottky Diodes 650V 10A Low Vf SiC schottky diode in TO220-2
SiC Schottky Diodes 650V 10A Low Vf SiC schottky diode in TO220-2
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 6.93 EUR |
| 10+ | 3.57 EUR |
| 100+ | 3.26 EUR |
| 500+ | 2.82 EUR |