BSF134N10NJ3 G Infineon Technologies
auf Bestellung 4496 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.19 EUR |
| 10+ | 2.66 EUR |
| 100+ | 2.11 EUR |
| 250+ | 1.95 EUR |
| 500+ | 1.76 EUR |
| 1000+ | 1.44 EUR |
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Technische Details BSF134N10NJ3 G Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: DirectFET™ Isometric MX, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V, Power Dissipation (Max): 2.2W (Ta), 43W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 40µA, Supplier Device Package: MG-WDSON-2-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V.
Weitere Produktangebote BSF134N10NJ3 G nach Preis ab 1.61 EUR bis 1.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
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| BSF134N10NJ3G | Hersteller : Infineon Technologies |
 Description: BSF134N10 - 12V-300V N-CHANNEL P |
auf Bestellung 7476 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSF134N10NJ3 G | Hersteller : Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 13.4mOhm @ 30A, 10V Power Dissipation (Max): 2.2W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: MG-WDSON-2-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V |
auf Bestellung 4635 Stücke: Lieferzeit 10-14 Tag (e) |
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