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BSF450NE7NH3XUMA1

BSF450NE7NH3XUMA1 Infineon Technologies


Infineon-BSF450NE7NH3-DS-v02_02-EN.pdf?fileId=db3a30433a047ba0013a687e2ae403da Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 5A/15A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 8A, 10V
Power Dissipation (Max): 2.2W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 8µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 37.5 V
auf Bestellung 4300 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.6 EUR
10+ 2.16 EUR
100+ 1.72 EUR
500+ 1.45 EUR
1000+ 1.23 EUR
2000+ 1.17 EUR
Mindestbestellmenge: 7
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Technische Details BSF450NE7NH3XUMA1 Infineon Technologies

Description: MOSFET N-CH 75V 5A/15A 2WDSON, Packaging: Tape & Reel (TR), Package / Case: 3-WDSON, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 8A, 10V, Power Dissipation (Max): 2.2W (Ta), 18W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 8µA, Supplier Device Package: MG-WDSON-2, CanPAK M™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 37.5 V.

Weitere Produktangebote BSF450NE7NH3XUMA1 nach Preis ab 1.19 EUR bis 2.64 EUR

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BSF450NE7NH3XUMA1 BSF450NE7NH3XUMA1 Hersteller : Infineon Technologies Infineon_BSF450NE7NH3_DS_v02_03_EN-3360806.pdf MOSFET N-Ch 75V 15A CanPAK-2 SH
auf Bestellung 1422 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.64 EUR
10+ 2.2 EUR
100+ 1.74 EUR
250+ 1.61 EUR
500+ 1.46 EUR
1000+ 1.21 EUR
2500+ 1.19 EUR
Mindestbestellmenge: 2
BSF450NE7NH3XUMA1 BSF450NE7NH3XUMA1 Hersteller : INFINEON TECHNOLOGIES BSF450NE7NH3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 15A; 18W
Mounting: SMD
Drain-source voltage: 75V
Drain current: 15A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 18W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: CanPAK™ S; MG-WDSON-2
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
BSF450NE7NH3XUMA1 BSF450NE7NH3XUMA1 Hersteller : Infineon Technologies Infineon-BSF450NE7NH3-DS-v02_02-EN.pdf?fileId=db3a30433a047ba0013a687e2ae403da Description: MOSFET N-CH 75V 5A/15A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 8A, 10V
Power Dissipation (Max): 2.2W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 8µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 37.5 V
Produkt ist nicht verfügbar
BSF450NE7NH3XUMA1 BSF450NE7NH3XUMA1 Hersteller : INFINEON TECHNOLOGIES BSF450NE7NH3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 15A; 18W
Mounting: SMD
Drain-source voltage: 75V
Drain current: 15A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 18W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: CanPAK™ S; MG-WDSON-2
Produkt ist nicht verfügbar