BSG0810NDIATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 25V 19A/39A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 39A
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
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Technische Details BSG0810NDIATMA1 Infineon Technologies
Description: MOSFET 2N-CH 25V 19A/39A TISON8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 19A, 39A, Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V, Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V, FET Feature: Logic Level Gate, 4.5V Drive, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TISON-8.
Weitere Produktangebote BSG0810NDIATMA1 nach Preis ab 1.59 EUR bis 5.12 EUR
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BSG0810NDIATMA1 | Infineon Technologies |
MOSFETs IFX FET 15V-30V |
auf Bestellung 3879 Stücke: Lieferzeit 10-14 Tag (e) |
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BSG0810NDIATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 25V 19A/39A TISON8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 19A, 39A Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TISON-8 |
auf Bestellung 7440 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BSG0810NDIATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs IFX FET 15V-30V
MOSFETs IFX FET 15V-30V
auf Bestellung 3879 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.03 EUR |
| 10+ | 3.27 EUR |
| 100+ | 2.25 EUR |
| 500+ | 1.9 EUR |
| 1000+ | 1.76 EUR |
| 2500+ | 1.64 EUR |
| 5000+ | 1.59 EUR |
| BSG0810NDIATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 25V 19A/39A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 39A
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Description: MOSFET 2N-CH 25V 19A/39A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 39A
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
auf Bestellung 7440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.12 EUR |
| 10+ | 3.34 EUR |
| 100+ | 2.33 EUR |
| 500+ | 2 EUR |