BSH103BKR Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: BSH103BK - 30 V, N-CHANNEL TRENC
Input Capacitance (Ciss) (Max) @ Vds: 79.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 330mW (Ta), 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details BSH103BKR Nexperia USA Inc.
Description: BSH103BK - 30 V, N-CHANNEL TRENC, Input Capacitance (Ciss) (Max) @ Vds: 79.3 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Power Dissipation (Max): 330mW (Ta), 2.1W (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSH103BKR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
|
BSH103BKR | Nexperia USA Inc. |
Description: BSH103BK - 30 V, N-CHANNEL TRENC Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 270mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 79.3 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 1.25V @ 250µA Power Dissipation (Max): 330mW (Ta), 2.1W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BSH103BKR | Nexperia |
MOSFETs SOT23 N-CH 30V .27A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
BSH103BKR | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1A; Idm: 4A; 330mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1A Pulsed drain current: 4A Power dissipation: 0.33W Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSH103BKR |
|
Hersteller: Nexperia USA Inc.
Description: BSH103BK - 30 V, N-CHANNEL TRENC
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 79.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 330mW (Ta), 2.1W (Tc)
Description: BSH103BK - 30 V, N-CHANNEL TRENC
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 79.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 330mW (Ta), 2.1W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSH103BKR |
|
Hersteller: Nexperia
MOSFETs SOT23 N-CH 30V .27A
MOSFETs SOT23 N-CH 30V .27A
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSH103BKR |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1A; Idm: 4A; 330mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 0.33W
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1A; Idm: 4A; 330mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 0.33W
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH