BSH108,215
Produktcode: 143966
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Weitere Produktangebote BSH108,215 nach Preis ab 0.15 EUR bis 0.86 EUR
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BSH108,215 | Nexperia |
MOSFETs BSH108/SOT23/TO-236AB |
auf Bestellung 18123 Stücke: Lieferzeit 10-14 Tag (e) |
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BSH108,215 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 1.9A TO236AB Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Not For New Designs Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 830mW (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 1865 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSH108,215 |
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Hersteller: Nexperia
MOSFETs BSH108/SOT23/TO-236AB
MOSFETs BSH108/SOT23/TO-236AB
auf Bestellung 18123 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.86 EUR |
| 10+ | 0.56 EUR |
| 100+ | 0.27 EUR |
| 1000+ | 0.24 EUR |
| 3000+ | 0.15 EUR |
| BSH108,215 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 1.9A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Not For New Designs
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 830mW (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 1.9A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Not For New Designs
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 830mW (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 1865 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.86 EUR |
| 41+ | 0.51 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.25 EUR |