auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
| 9000+ | 0.13 EUR |
| 24000+ | 0.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BSH108,215 Nexperia
Description: MOSFET N-CH 30V 1.9A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 10V, Power Dissipation (Max): 830mW (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-236AB, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V.
Weitere Produktangebote BSH108,215 nach Preis ab 0.10 EUR bis 0.92 EUR
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BSH108,215 | Hersteller : Nexperia |
 Trans MOSFET N-CH 30V 1.9A 3-Pin SOT-23 T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSH108,215 | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 1.9A 3-Pin SOT-23 T/R |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSH108,215 | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 1.9A 3-Pin SOT-23 T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSH108,215 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 1.9A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 10V Power Dissipation (Max): 830mW (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-236AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V |
auf Bestellung 81000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSH108,215 | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 1.9A 3-Pin SOT-23 T/R |
auf Bestellung 8189 Stücke: Lieferzeit 14-21 Tag (e) |
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BSH108,215 | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 1.9A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSH108,215 | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 1.9A 3-Pin SOT-23 T/R |
auf Bestellung 8189 Stücke: Lieferzeit 14-21 Tag (e) |
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BSH108,215 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 830mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.2A Power dissipation: 0.83W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 10nC |
auf Bestellung 3561 Stücke: Lieferzeit 14-21 Tag (e) |
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BSH108,215 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 830mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.2A Power dissipation: 0.83W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 10nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3561 Stücke: Lieferzeit 7-14 Tag (e) |
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BSH108,215 | Hersteller : Nexperia |
MOSFETs BSH108/SOT23/TO-236AB |
auf Bestellung 18123 Stücke: Lieferzeit 10-14 Tag (e) |
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BSH108,215 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 1.9A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 10V Power Dissipation (Max): 830mW (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-236AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V |
auf Bestellung 82307 Stücke: Lieferzeit 10-14 Tag (e) |
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BSH108,215 | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 1.9A 3-Pin SOT-23 T/R |
auf Bestellung 188 Stücke: Lieferzeit 14-21 Tag (e) |
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BSH108,215 Produktcode: 143966
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BSH108,215 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 1.9A 3-Pin SOT-23 T/R |
auf Bestellung 1882 Stücke: Lieferzeit 14-21 Tag (e) |
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BSH108,215 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 1.9A 3-Pin SOT-23 T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BSH108,215 | Hersteller : NEXPERIA |
Description: NEXPERIA - BSH108,215 - MOSFET, N-KANAL, 30V, 1.9A, SOT23 tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 1.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 830mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.077ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 66845 Stücke: Lieferzeit 14-21 Tag (e) |