BSH111,215 NXP Semiconductors
| Anzahl | Privatkunde |
|---|---|
| 2184+ | 0.3 EUR |
| 10000+ | 0.26 EUR |
| 100000+ | 0.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BSH111,215 NXP Semiconductors
Description: MOSFET N-CH 55V 335MA TO236, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 335mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V, Power Dissipation (Max): 830mW (Tc), Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: TO-236AB, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V.
Weitere Produktangebote BSH111,215 nach Preis ab 0.21 EUR bis 0.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
BSH111,215 | NXP Semiconductors |
 Trans MOSFET N-CH 55V 0.335A 3-Pin SOT-23 T/R |
auf Bestellung 207118 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
 |
BSH111,215 | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 335MA TO236 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 335mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V Power Dissipation (Max): 830mW (Tc) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TO-236AB Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
auf Bestellung 323108 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
| BSH111,215 |
|
auf Bestellung 18000 Stücke: Lieferzeit 7-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BSH111,215 |
|
Hersteller: NXP Semiconductors
Trans MOSFET N-CH 55V 0.335A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 55V 0.335A 3-Pin SOT-23 T/R
auf Bestellung 207118 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2184+ | 0.3 EUR |
| 10000+ | 0.26 EUR |
| 100000+ | 0.21 EUR |
| BSH111,215 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 335MA TO236
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 335mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 830mW (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET N-CH 55V 335MA TO236
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 335mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 830mW (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 323108 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1450+ | 0.38 EUR |
| BSH111,215 |
|
auf Bestellung 18000 Stücke:
Lieferzeit 7-21 Tag (e)