| Anzahl | Preis |
|---|---|
| 5+ | 0.62 EUR |
| 10+ | 0.34 EUR |
| 100+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 3000+ | 0.18 EUR |
| 9000+ | 0.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BSH202,215 Nexperia
Description: MOSFET P-CH 30V 520MA TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 520mA (Ta), Rds On (Max) @ Id, Vgs: 900mOhm @ 280mA, 10V, Power Dissipation (Max): 417mW (Ta), Vgs(th) (Max) @ Id: 1.9V @ 1mA, Supplier Device Package: TO-236AB, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 24 V.
Weitere Produktangebote BSH202,215
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
BSH202,215 | Nexperia USA Inc. |
 Description: MOSFET P-CH 30V 520MA TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 520mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 280mA, 10V Power Dissipation (Max): 417mW (Ta) Vgs(th) (Max) @ Id: 1.9V @ 1mA Supplier Device Package: TO-236AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 24 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
BSH202,215 | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 520MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 520mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 280mA, 10V Power Dissipation (Max): 417mW (Ta) Vgs(th) (Max) @ Id: 1.9V @ 1mA Supplier Device Package: TO-236AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 24 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSH202,215 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 520MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 280mA, 10V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 1mA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 24 V
Description: MOSFET P-CH 30V 520MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 280mA, 10V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 1mA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 24 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSH202,215 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 520MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 280mA, 10V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 1mA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 24 V
Description: MOSFET P-CH 30V 520MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 280mA, 10V
Power Dissipation (Max): 417mW (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 1mA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 24 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH