BSL211SPT Infineon Technologies

Description: MOSFET P-CH 20V 4.7A TSOP-6, Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Obsolete, Supplier Device Package: PG-TSOP6-6, Vgs(th) (Max) @ Id: 1.2V @ 25µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V, Packaging: Tape & Reel (TR).