BSL215P L6327 Infineon Technologies
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Technische Details BSL215P L6327 Infineon Technologies
Description: P-CHANNEL MOSFET, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.5A, Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V, Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 3.55nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 11µA, Supplier Device Package: PG-TSOP6-6.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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BSL215PL6327 | Hersteller : Infineon Technologies |
Description: P-CHANNEL MOSFET Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.55nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 11µA Supplier Device Package: PG-TSOP6-6 |
Produkt ist nicht verfügbar |