BSL296SNH6327XTSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 100V 1.4A TSOP-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 1.26A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: PG-TSOP6-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
auf Bestellung 108300 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1484+ | 0.48 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BSL296SNH6327XTSA1 Infineon Technologies
Description: MOSFET N-CH 100V 1.4A TSOP-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), Rds On (Max) @ Id, Vgs: 460mOhm @ 1.26A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 100µA, Supplier Device Package: PG-TSOP6-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V.
Weitere Produktangebote BSL296SNH6327XTSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
BSL296SNH6327XTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6 Mounting: SMD Case: TSOP6 Features of semiconductor devices: ESD protected gate Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 1.4A On-state resistance: 0.56Ω Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
BSL296SNH6327XTSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 1.4A TSOP-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 1.26A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 100µA Supplier Device Package: PG-TSOP6-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V |
Produkt ist nicht verfügbar |
|
 |
BSL296SNH6327XTSA1 | Hersteller : Infineon Technologies |
MOSFET SMALL SIGNAL+P-CH |
Produkt ist nicht verfügbar |
|
|
|
BSL296SNH6327XTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6 Mounting: SMD Case: TSOP6 Features of semiconductor devices: ESD protected gate Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 1.4A On-state resistance: 0.56Ω Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar |
Produkt ist nicht verfügbar |