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BSL296SNH6327XTSA1

BSL296SNH6327XTSA1 Infineon Technologies


BSL296SN.pdf Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 1.4A TSOP-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 1.26A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
1217+0.39 EUR
Mindestbestellmenge: 1217
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Technische Details BSL296SNH6327XTSA1 Infineon Technologies

Description: MOSFET N-CH 100V 1.4A TSOP-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), Rds On (Max) @ Id, Vgs: 460mOhm @ 1.26A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 100µA, Supplier Device Package: PG-TSOP6-6, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote BSL296SNH6327XTSA1

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BSL296SNH6327XTSA1 Hersteller : ROCHESTER ELECTRONICS BSL296SN.pdf Description: ROCHESTER ELECTRONICS - BSL296SNH6327XTSA1 - BSL296 250V-600V SMALL SIGNALOR
tariffCode: 85412100
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 108300 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BSL296SNH6327XTSA1 BSL296SNH6327XTSA1 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A60A905D42310B&compId=BSL296SNH6327XTSA1.pdf?ci_sign=b3a8e472d0346ab145622f3aa123c2a7e2dbba1a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6; ESD
Mounting: SMD
Case: TSOP6
Drain current: 1.4A
Version: ESD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Polarisation: unipolar
On-state resistance: 0.56Ω
Drain-source voltage: 100V
Power dissipation: 2W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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BSL296SNH6327XTSA1 BSL296SNH6327XTSA1 Hersteller : Infineon Technologies BSL296SN.pdf Description: MOSFET N-CH 100V 1.4A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 1.26A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSL296SNH6327XTSA1 BSL296SNH6327XTSA1 Hersteller : Infineon Technologies Infineon_BSL296SN_DS_v02_00_EN-1731254.pdf MOSFET SMALL SIGNAL+P-CH
Produkt ist nicht verfügbar
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BSL296SNH6327XTSA1 BSL296SNH6327XTSA1 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A60A905D42310B&compId=BSL296SNH6327XTSA1.pdf?ci_sign=b3a8e472d0346ab145622f3aa123c2a7e2dbba1a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6; ESD
Mounting: SMD
Case: TSOP6
Drain current: 1.4A
Version: ESD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Polarisation: unipolar
On-state resistance: 0.56Ω
Drain-source voltage: 100V
Power dissipation: 2W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH