BSL302SNL6327 Infineon Technologies


INFNS16736-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSOP6-6-6
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BSL302SNL6327 Infineon Technologies

Description: SMALL SIGNAL N-CHANNEL MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TSOP6-6-6, Vgs(th) (Max) @ Id: 2V @ 30µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Bulk.

Weitere Produktangebote BSL302SNL6327

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSL302SN L6327 BSL302SN L6327 Infineon Technologies BSL302SN_Rev2.0-86900.pdf MOSFET N-Ch 30V 7.1A TSOP-6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSL302SN L6327 BSL302SN_Rev2.0-86900.pdf
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 7.1A TSOP-6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH