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BSL308CL6327HTSA1 Infineon Technologies


BSL308C_Rev+2+0.pdf?folderId=db3a30431add1d95011aed428f2d0285&fileId=db3a30431ff98815012060ff862e6193
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 2.3A TSOP6-6
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 2V @ 11µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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Technische Details BSL308CL6327HTSA1 Infineon Technologies

Description: MOSFET N/P-CH 30V 2.3A TSOP6-6, Supplier Device Package: PG-TSOP6-6, Vgs(th) (Max) @ Id: 2V @ 11µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V, Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 2.3A, 2A, Drain to Source Voltage (Vdss): 30V, Power - Max: 500mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).