BSL308PEH6327XTSA1
Produktcode: 163576
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Weitere Produktangebote BSL308PEH6327XTSA1 nach Preis ab 0.29 EUR bis 1.36 EUR
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BSL308PEH6327XTSA1 | Infineon Technologies |
Description: MOSFET 2P-CH 30V 2A TSOP6-6 Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: PG-TSOP6-6 Vgs(th) (Max) @ Id: 1V @ 11µA FET Feature: Logic Level Gate, 4.5V Drive Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Current - Continuous Drain (Id) @ 25°C: 2A Drain to Source Voltage (Vdss): 30V Power - Max: 500mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSL308PEH6327XTSA1 | Infineon Technologies |
MOSFETs SMALL SIGNAL+P-CH |
auf Bestellung 18378 Stücke: Lieferzeit 10-14 Tag (e) |
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BSL308PEH6327XTSA1 | Infineon Technologies |
Description: MOSFET 2P-CH 30V 2A TSOP6-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 1V @ 11µA Supplier Device Package: PG-TSOP6-6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 10098 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSL308PEH6327XTSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 2A TSOP6-6
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1V @ 11µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 30V 2A TSOP6-6
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1V @ 11µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.33 EUR |
| 6000+ | 0.3 EUR |
| 9000+ | 0.29 EUR |
| BSL308PEH6327XTSA1 |
|
Hersteller: Infineon Technologies
MOSFETs SMALL SIGNAL+P-CH
MOSFETs SMALL SIGNAL+P-CH
auf Bestellung 18378 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 0.98 EUR |
| 10+ | 0.85 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.39 EUR |
| 3000+ | 0.35 EUR |
| 9000+ | 0.32 EUR |
| BSL308PEH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 2A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 1V @ 11µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2P-CH 30V 2A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 1V @ 11µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 10098 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.36 EUR |
| 21+ | 0.84 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.38 EUR |