BSL308PEH6327XTSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET 2P-CH 30V 2A TSOP6-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 1V @ 11µA
Supplier Device Package: PG-TSOP6-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.38 EUR |
| 6000+ | 0.36 EUR |
| 9000+ | 0.34 EUR |
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Technische Details BSL308PEH6327XTSA1 Infineon Technologies
Description: MOSFET 2P-CH 30V 2A TSOP6-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2A, Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V, FET Feature: Logic Level Gate, 4.5V Drive, Vgs(th) (Max) @ Id: 1V @ 11µA, Supplier Device Package: PG-TSOP6-6, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BSL308PEH6327XTSA1 nach Preis ab 0.36 EUR bis 1 EUR
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BSL308PEH6327XTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6 Type of transistor: P-MOSFET x2 Technology: OptiMOS™ P3 Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A Power dissipation: 0.5W Case: PG-TSOP-6 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2147 Stücke: Lieferzeit 7-14 Tag (e) |
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BSL308PEH6327XTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6 Type of transistor: P-MOSFET x2 Technology: OptiMOS™ P3 Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A Power dissipation: 0.5W Case: PG-TSOP-6 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 2147 Stücke: Lieferzeit 14-21 Tag (e) |
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BSL308PEH6327XTSA1 | Hersteller : Infineon Technologies |
MOSFET SMALL SIGNAL+P-CH |
auf Bestellung 20065 Stücke: Lieferzeit 10-14 Tag (e) |
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BSL308PEH6327XTSA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2P-CH 30V 2A TSOP6-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 1V @ 11µA Supplier Device Package: PG-TSOP6-6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 25084 Stücke: Lieferzeit 10-14 Tag (e) |
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BSL308PEH6327XTSA1 | Hersteller : INFINEON |
Description: INFINEON - BSL308PEH6327XTSA1 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 2 A, 2 A, 0.062 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 2A hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 2A Drain-Source-Durchgangswiderstand, p-Kanal: 0.062ohm Verlustleistung, p-Kanal: 500mW Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Anzahl der Pins: 6Pin(s) Drain-Source-Durchgangswiderstand, n-Kanal: 0.062ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 500mW Betriebstemperatur, max.: 150°C |
auf Bestellung 11443 Stücke: Lieferzeit 14-21 Tag (e) |
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BSL308PEH6327XTSA1 | Hersteller : INFINEON |
Description: INFINEON - BSL308PEH6327XTSA1 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 2 A, 2 A, 0.062 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 2A hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 2A Drain-Source-Durchgangswiderstand, p-Kanal: 0.062ohm Verlustleistung, p-Kanal: 500mW Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Anzahl der Pins: 6Pin(s) Drain-Source-Durchgangswiderstand, n-Kanal: 0.062ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 500mW Betriebstemperatur, max.: 150°C |
auf Bestellung 11443 Stücke: Lieferzeit 14-21 Tag (e) |
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BSL308PEH6327XTSA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 30V 2A Automotive 6-Pin TSOP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSL308PEH6327XTSA1 Produktcode: 163576 |
Transistoren > Transistoren P-Kanal-Feld |
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