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BSL716SNH6327XTSA1

BSL716SNH6327XTSA1 Infineon Technologies


BSL716SN.pdf Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 2.5A TSOP-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
1893+0.26 EUR
Mindestbestellmenge: 1893
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Technische Details BSL716SNH6327XTSA1 Infineon Technologies

Description: MOSFET N-CH 75V 2.5A TSOP-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 218µA, Supplier Device Package: PG-TSOP6-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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BSL716SNH6327XTSA1 Hersteller : ROCHESTER ELECTRONICS BSL716SN.pdf Description: ROCHESTER ELECTRONICS - BSL716SNH6327XTSA1 - BSL716 250V-600V SMALL SIGNALOR SMALL
tariffCode: 85412100
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 1220 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BSL716SNH6327XTSA1 BSL716SNH6327XTSA1 Hersteller : Infineon Technologies BSL716SN.pdf Description: MOSFET N-CH 75V 2.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-TSOP6-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSL716SNH6327XTSA1 BSL716SNH6327XTSA1 Hersteller : Infineon Technologies Infineon-BSL716SN-DS-v02_00-EN-1731239.pdf MOSFETs SMALL SIGNAL+P-CH
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