BSM120D12P2C005 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 1200V 120A MODULE
Packaging: Bulk
Package / Case: Module
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 780W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 22mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1200V 120A MODULE
Packaging: Bulk
Package / Case: Module
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 780W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 22mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 635.76 EUR |
12+ | 611.87 EUR |
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Technische Details BSM120D12P2C005 Rohm Semiconductor
Description: MOSFET 2N-CH 1200V 120A MODULE, Packaging: Bulk, Package / Case: Module, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 780W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V, Vgs(th) (Max) @ Id: 2.7V @ 22mA, Supplier Device Package: Module, Part Status: Active.
Weitere Produktangebote BSM120D12P2C005 nach Preis ab 924.85 EUR bis 924.85 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
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BSM120D12P2C005 | Hersteller : ROHM Semiconductor | Discrete Semiconductor Modules Mod: 1200V 120A (w/ Diode) |
auf Bestellung 13 Stücke: Lieferzeit 14-28 Tag (e) |
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