BSM150GD60DLCBOSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MODULE
Power - Max: 570 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 180 A
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Current - Collector Cutoff (Max): 500 µA
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Technische Details BSM150GD60DLCBOSA1 Infineon Technologies
Description: IGBT MODULE, Power - Max: 570 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 180 A, Part Status: Active, Supplier Device Package: Module, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A, Operating Temperature: -40°C ~ 125°C (TJ), Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray, Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V, Current - Collector Cutoff (Max): 500 µA.
