Technische Details BSM180D12P2E002 ROHM Semiconductor
Description: 1200V, 204A, HALF BRIDGE, SILICO, Power - Max: 1360W (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk, Part Status: Active, Supplier Device Package: Module, Vgs(th) (Max) @ Id: 4V @ 35.2mA, Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 204A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV).
Weitere Produktangebote BSM180D12P2E002 nach Preis ab 1241.03 EUR bis 1241.03 EUR
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BSM180D12P2E002 | Rohm Semiconductor |
Description: 1200V, 204A, HALF BRIDGE, SILICO Power - Max: 1360W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Part Status: Active Supplier Device Package: Module Vgs(th) (Max) @ Id: 4V @ 35.2mA Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 10V Current - Continuous Drain (Id) @ 25°C: 204A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BSM180D12P2E002 |
Hersteller: Rohm Semiconductor
Description: 1200V, 204A, HALF BRIDGE, SILICO
Power - Max: 1360W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4V @ 35.2mA
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Description: 1200V, 204A, HALF BRIDGE, SILICO
Power - Max: 1360W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4V @ 35.2mA
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1241.03 EUR |