BSM180D12P3C007 Rohm Semiconductor

Description: SIC 2N-CH 1200V 180A MODULE, Part Status: Active, Supplier Device Package: Module, Vgs(th) (Max) @ Id: 5.6V @ 50mA, Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 880W, Technology: Silicon Carbide (SiC), Operating Temperature: 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: Module, Packaging: Bulk.