Technische Details BSM180D12P3C007 ROHM Semiconductor
Description: SIC 2N-CH 1200V 180A MODULE, Packaging: Bulk, Package / Case: Module, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 880W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V, Vgs(th) (Max) @ Id: 5.6V @ 50mA, Supplier Device Package: Module, Part Status: Active.
Weitere Produktangebote BSM180D12P3C007 nach Preis ab 890.42 EUR bis 890.42 EUR
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BSM180D12P3C007 | Hersteller : Rohm Semiconductor |
 Description: SIC 2N-CH 1200V 180A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 880W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Vgs(th) (Max) @ Id: 5.6V @ 50mA Supplier Device Package: Module Part Status: Active |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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