BSM180D12P3C007 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: SIC 2N-CH 1200V 180A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 880W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Vgs(th) (Max) @ Id: 5.6V @ 50mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 890.42 EUR |
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Technische Details BSM180D12P3C007 Rohm Semiconductor
Description: SIC 2N-CH 1200V 180A MODULE, Packaging: Bulk, Package / Case: Module, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 880W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V, Vgs(th) (Max) @ Id: 5.6V @ 50mA, Supplier Device Package: Module, Part Status: Active.
Weitere Produktangebote BSM180D12P3C007 nach Preis ab 979.44 EUR bis 979.44 EUR
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BSM180D12P3C007 | Hersteller : ROHM Semiconductor |
MOSFET Modules Half Bridge Module SiC UMOSFET & SBD |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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