BSM200GA120DLCHOSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 370A 1450W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Description: IGBT MOD 1200V 370A 1450W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
auf Bestellung 643 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 275.25 EUR |
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Technische Details BSM200GA120DLCHOSA1 Infineon Technologies
Description: IGBT MOD 1200V 370A 1450W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 370 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1450 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 13 nF @ 25 V.
Weitere Produktangebote BSM200GA120DLCHOSA1 nach Preis ab 272.76 EUR bis 312.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| BSM200GA120DLCHOSA1 | Hersteller : Infineon Technologies | MEDIUM POWER 62MM |
auf Bestellung 273 Stücke: Lieferzeit 14-21 Tag (e) |
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| BSM200GA120DLCHOSA1 | Hersteller : Infineon Technologies | MEDIUM POWER 62MM |
auf Bestellung 310 Stücke: Lieferzeit 14-21 Tag (e) |
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| BSM200GA120DLCHOSA1 | Hersteller : Infineon Technologies | MEDIUM POWER 62MM |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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| BSM200GA120DLCHOSA1 | Hersteller : Infineon Technologies | MEDIUM POWER 62MM |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| BSM200GA120DLCHOSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BSM200GA120DLCHOSA1 - BSM200GA120 INSULATED GATE BIPOLAR TRAN euEccn: TBC hazardous: false productTraceability: Yes-Date/Lot Code usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 370 Stücke: Lieferzeit 14-21 Tag (e) |
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| BSM200GA120DLCHOSA1 | Hersteller : Infineon Technologies | BSM200GA120DLCHOSA1 |
Produkt ist nicht verfügbar |
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| BSM200GA120DLCHOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 370A 1450W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 370 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1450 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
Produkt ist nicht verfügbar |