auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 100.29 EUR |
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Technische Details BSM200GA120DN2S7HOSA1 Infineon Technologies
Description: IGBT MOD, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single Switch, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 300 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1.55 W, Current - Collector Cutoff (Max): 4 mA.
Weitere Produktangebote BSM200GA120DN2S7HOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| BSM200GA120DN2S7HOSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BSM200GA120DN2S7HOSA1 - BSM200GA120DN2 - IGBT POWER MODULE 62MM tariffCode: 85412900 euEccn: NLR hazardous: false productTraceability: No usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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| BSM200GA120DN2S7HOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1.55 W Current - Collector Cutoff (Max): 4 mA |
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