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BSM200GB120DN2HOSA1 Infineon Technologies


Hersteller: Infineon Technologies
BSM200GB120DN2HOSA1
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Technische Details BSM200GB120DN2HOSA1 Infineon Technologies

Description: IGBT MOD 1200V 290A 1400W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 290 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1400 W, Current - Collector Cutoff (Max): 4 mA, Input Capacitance (Cies) @ Vce: 13 nF @ 25 V.

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BSM200GB120DN2HOSA1 Hersteller : Infineon Technologies Description: IGBT MOD 1200V 290A 1400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1400 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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BSM200GB120DN2HOSA1 Hersteller : Infineon Technologies IGBT Modules MEDIUM POWER 62MM
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