BSM250D17P2E004 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 1700V 250A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1800W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V
Vgs(th) (Max) @ Id: 4V @ 66mA
Supplier Device Package: Module
Part Status: Active
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Technische Details BSM250D17P2E004 Rohm Semiconductor
Description: MOSFET 2N-CH 1700V 250A MODULE, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1800W (Tc), Drain to Source Voltage (Vdss): 1700V (1.7kV), Current - Continuous Drain (Id) @ 25°C: 250A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V, Vgs(th) (Max) @ Id: 4V @ 66mA, Supplier Device Package: Module, Part Status: Active.
Weitere Produktangebote BSM250D17P2E004 nach Preis ab 1702.17 EUR bis 1702.17 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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BSM250D17P2E004 | ROHM Semiconductor |
MOSFET Modules 1700V Vdss; 250A Id SiC Pwr Module |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSM250D17P2E004 |
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Hersteller: ROHM Semiconductor
MOSFET Modules 1700V Vdss; 250A Id SiC Pwr Module
MOSFET Modules 1700V Vdss; 250A Id SiC Pwr Module
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1702.17 EUR |