BSM300D12P2E001 Rohm Semiconductor

Description: MOSFET 2N-CH 1200V 300A MODULE, Part Status: Active, Supplier Device Package: Module, Vgs(th) (Max) @ Id: 4V @ 68mA, Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 1875W, Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.