Technische Details BSM300D12P2E001 ROHM Semiconductor
Description: MOSFET 2N-CH 1200V 300A MODULE, Part Status: Active, Supplier Device Package: Module, Vgs(th) (Max) @ Id: 4V @ 68mA, Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 1875W, Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Weitere Produktangebote BSM300D12P2E001 nach Preis ab 1153.36 EUR bis 1153.36 EUR
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BSM300D12P2E001 | Rohm Semiconductor |
 Description: MOSFET 2N-CH 1200V 300A MODULEPart Status: Active Supplier Device Package: Module Vgs(th) (Max) @ Id: 4V @ 68mA Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 10V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 1875W Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSM300D12P2E001 |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 1200V 300A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4V @ 68mA
Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 1875W
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: MOSFET 2N-CH 1200V 300A MODULE
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4V @ 68mA
Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 1875W
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1153.36 EUR |