BSM300D12P2E001 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET 2N-CH 1200V 300A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1875W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 10V
Vgs(th) (Max) @ Id: 4V @ 68mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1153.36 EUR |
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Technische Details BSM300D12P2E001 Rohm Semiconductor
Description: MOSFET 2N-CH 1200V 300A MODULE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1875W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 300A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 10V, Vgs(th) (Max) @ Id: 4V @ 68mA, Supplier Device Package: Module, Part Status: Active.
Weitere Produktangebote BSM300D12P2E001 nach Preis ab 1209.37 EUR bis 1209.37 EUR
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BSM300D12P2E001 | Hersteller : ROHM Semiconductor |
MOSFET Modules 300A SiC Power Module |
auf Bestellung 23 Stücke: Lieferzeit 10-14 Tag (e) |
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