BSM300D12P4G101 ROHM Semiconductor
Hersteller: ROHM Semiconductor
MOSFET Modules BSM300D12P4G101 is a half bridge module consisting of SiC-UMOSFET
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Technische Details BSM300D12P4G101 ROHM Semiconductor
Description: MOSFET 2N-CH 1200V 291A MODULE, Supplier Device Package: Module, Vgs(th) (Max) @ Id: 4.8V @ 145.6mA, Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 291A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 925W (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: 175°C (TJ), Configuration: 2 N-Channel, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Box.
Weitere Produktangebote BSM300D12P4G101
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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BSM300D12P4G101 | Rohm Semiconductor |
Description: MOSFET 2N-CH 1200V 291A MODULE Supplier Device Package: Module Vgs(th) (Max) @ Id: 4.8V @ 145.6mA Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V Current - Continuous Drain (Id) @ 25°C: 291A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 925W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: 175°C (TJ) Configuration: 2 N-Channel Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSM300D12P4G101 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 1200V 291A MODULE
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4.8V @ 145.6mA
Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 291A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 925W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: MOSFET 2N-CH 1200V 291A MODULE
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4.8V @ 145.6mA
Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 291A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 925W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH