BSM30GP60BOSA1 Infineon Technologies
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Technische Details BSM30GP60BOSA1 Infineon Technologies
Description: IGBT MODULE 600V 50A 180W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Full Bridge, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A, NTC Thermistor: Yes, Supplier Device Package: Module, Part Status: Obsolete, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 180 W, Current - Collector Cutoff (Max): 300 nA, Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V.
Weitere Produktangebote BSM30GP60BOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| BSM30GP60BOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MODULE 600V 50A 180W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Full Bridge Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 180 W Current - Collector Cutoff (Max): 300 nA Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V |
Produkt ist nicht verfügbar |
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| BSM30GP60BOSA1 | Hersteller : Infineon Technologies | IGBT Modules LOW POWER ECONO |
Produkt ist nicht verfügbar |