Produkte > INFINEON TECHNOLOGIES > BSM35GD120DN2BOSA1

BSM35GD120DN2BOSA1 Infineon Technologies


EUPCS02670-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 280 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Supplier Device Package: AG-ECONOPACK 2K
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
Operating Temperature: 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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Technische Details BSM35GD120DN2BOSA1 Infineon Technologies

Description: IGBT MODULE, Input Capacitance (Cies) @ Vce: 2 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 280 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 50 A, Part Status: Active, Supplier Device Package: AG-ECONOPACK 2K, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A, Operating Temperature: 150°C (TJ), Configuration: Three Phase Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.