BSM50GD120DN2BOSA1 Infineon Technologies
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Technische Details BSM50GD120DN2BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 72A 350W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Obsolete, Current - Collector (Ic) (Max): 72 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 350 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V.
Weitere Produktangebote BSM50GD120DN2BOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| BSM50GD120DN2BOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 72A 350W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A NTC Thermistor: No Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 72 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V |
Produkt ist nicht verfügbar |
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| BSM50GD120DN2BOSA1 | Hersteller : Infineon Technologies | IGBT Modules LOW POWER ECONO |
Produkt ist nicht verfügbar |