BSM600D12P3G001 ROHM Semiconductor
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2940.54 EUR |
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Technische Details BSM600D12P3G001 ROHM Semiconductor
Description: MOSFET 2N-CH 1200V 600A MODULE, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 2450W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 600A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 31000pF @ 10V, Vgs(th) (Max) @ Id: 5.6V @ 182mA, Supplier Device Package: Module, Part Status: Active.
Weitere Produktangebote BSM600D12P3G001 nach Preis ab 3007.45 EUR bis 3007.45 EUR
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BSM600D12P3G001 | Hersteller : Rohm Semiconductor |
 Description: MOSFET 2N-CH 1200V 600A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2450W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 600A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 31000pF @ 10V Vgs(th) (Max) @ Id: 5.6V @ 182mA Supplier Device Package: Module Part Status: Active |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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