BSM600D12P3G001 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET 2N-CH 1200V 600A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2450W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 31000pF @ 10V
Vgs(th) (Max) @ Id: 5.6V @ 182mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3007.45 EUR |
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Technische Details BSM600D12P3G001 Rohm Semiconductor
Description: MOSFET 2N-CH 1200V 600A MODULE, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 2450W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 600A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 31000pF @ 10V, Vgs(th) (Max) @ Id: 5.6V @ 182mA, Supplier Device Package: Module, Part Status: Active.
Weitere Produktangebote BSM600D12P3G001 nach Preis ab 3103.90 EUR bis 3103.90 EUR
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BSM600D12P3G001 | Hersteller : ROHM Semiconductor |
MOSFET Modules 576A 1200V HALF BRIDGE SIC |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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