BSM600D12P3G001 Rohm Semiconductor

Description: MOSFET 2N-CH 1200V 600A MODULE, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 2450W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 600A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 31000pF @ 10V, Vgs(th) (Max) @ Id: 5.6V @ 182mA, Supplier Device Package: Module, Part Status: Active.