BSM75GB120DLCHOSA1 ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BSM75GB120DLCHOSA1 - BSM75GB120 INSULATED GATE BIPOLAR TRANS
euEccn: TBC
hazardous: false
productTraceability: Yes-Date/Lot Code
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
Description: ROCHESTER ELECTRONICS - BSM75GB120DLCHOSA1 - BSM75GB120 INSULATED GATE BIPOLAR TRANS
euEccn: TBC
hazardous: false
productTraceability: Yes-Date/Lot Code
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 4119 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details BSM75GB120DLCHOSA1 ROCHESTER ELECTRONICS
Description: IGBT MOD 1200V 170A 690W MOD, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 170 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 690 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V.
Weitere Produktangebote BSM75GB120DLCHOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| BSM75GB120DLCHOSA1 | Hersteller : Infineon Technologies |
 Trans IGBT Module N-CH |
Produkt ist nicht verfügbar |
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| BSM75GB120DLCHOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 170A 690W MOD Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 170 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 690 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V |
Produkt ist nicht verfügbar |