BSM75GB170DN2HOSA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 4+ | 211.39 EUR |
| 25+ | 204.22 EUR |
| 100+ | 191.61 EUR |
| 500+ | 179.38 EUR |
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Technische Details BSM75GB170DN2HOSA1 Infineon Technologies
Description: IGBT MOD 1700V 110A 625W MOD, Input Capacitance (Cies) @ Vce: 11 nF @ 25 V, Power - Max: 625 W, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector (Ic) (Max): 110 A, Supplier Device Package: Module, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A, Operating Temperature: 150°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.
Weitere Produktangebote BSM75GB170DN2HOSA1 nach Preis ab 210.86 EUR bis 240.86 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| BSM75GB170DN2HOSA1 | Infineon Technologies |
 Description: IGBT MOD 1700V 110A 625W MODInput Capacitance (Cies) @ Vce: 11 nF @ 25 V Power - Max: 625 W Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 110 A Supplier Device Package: Module NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A Operating Temperature: 150°C (TJ) Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
auf Bestellung 635 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSM75GB170DN2HOSA1 | ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BSM75GB170DN2HOSA1 - BSM75GB170 INSULATED GATE BIPOLAR TRANS euEccn: TBC hazardous: false productTraceability: Yes-Date/Lot Code usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 637 Stücke: Lieferzeit 14-21 Tag (e) |
|
| BSM75GB170DN2HOSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 110A 625W MOD
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Power - Max: 625 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 110 A
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
Operating Temperature: 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: IGBT MOD 1700V 110A 625W MOD
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Power - Max: 625 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 110 A
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
Operating Temperature: 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 635 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 210.86 EUR |
| BSM75GB170DN2HOSA1 |
|
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BSM75GB170DN2HOSA1 - BSM75GB170 INSULATED GATE BIPOLAR TRANS
euEccn: TBC
hazardous: false
productTraceability: Yes-Date/Lot Code
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
Description: ROCHESTER ELECTRONICS - BSM75GB170DN2HOSA1 - BSM75GB170 INSULATED GATE BIPOLAR TRANS
euEccn: TBC
hazardous: false
productTraceability: Yes-Date/Lot Code
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 637 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 240.86 EUR |