BSM75GB170DN2HOSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 110A 625W MOD
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Power - Max: 625 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 110 A
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
Operating Temperature: 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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Technische Details BSM75GB170DN2HOSA1 Infineon Technologies
Description: IGBT MOD 1700V 110A 625W MOD, Input Capacitance (Cies) @ Vce: 11 nF @ 25 V, Power - Max: 625 W, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector (Ic) (Max): 110 A, Supplier Device Package: Module, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A, Operating Temperature: 150°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.
Weitere Produktangebote BSM75GB170DN2HOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| BSM75GB170DN2HOSA1 | Infineon |
IGBT MOD 1700V 110A 625W Силові IGBT-модулі |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| BSM75GB170DN2HOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 110A 625W MOD Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 625 W Input Capacitance (Cies) @ Vce: 11 nF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSM75GB170DN2HOSA1 |
|
Hersteller: Infineon
IGBT MOD 1700V 110A 625W Силові IGBT-модулі
IGBT MOD 1700V 110A 625W Силові IGBT-модулі
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSM75GB170DN2HOSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 110A 625W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 625 W
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Description: IGBT MOD 1700V 110A 625W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 625 W
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH