BSO083N03MSGXUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 30V 11A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 14A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
auf Bestellung 2122 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 1.13 EUR |
| 19+ | 0.96 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.69 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BSO083N03MSGXUMA1 Infineon Technologies
Description: MOSFET N-CH 30V 11A 8DSO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 14A, 10V, Power Dissipation (Max): 1.56W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-DSO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V.
Weitere Produktangebote BSO083N03MSGXUMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| BSO083N03MSGXUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 11A 8DSO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 14A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-DSO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V |
Produkt ist nicht verfügbar |