BSO200P03SNTMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 7.4A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Technische Details BSO200P03SNTMA1 Infineon Technologies
Description: MOSFET P-CH 30V 7.4A 8DSO, Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-DSO-8, Vgs(th) (Max) @ Id: 1.5V @ 100µA, Power Dissipation (Max): 1.56W (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).