BSO203PHXUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET 2P-CH 20V 7A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: PG-DSO-8
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 371+ | 1.25 EUR |
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Technische Details BSO203PHXUMA1 Infineon Technologies
Description: MOSFET 2P-CH 20V 7A 8DSO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 7A, Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V, Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 100µA, Supplier Device Package: PG-DSO-8, Part Status: Obsolete.
Weitere Produktangebote BSO203PHXUMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BSO203PHXUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8 Mounting: SMD On-state resistance: 21mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: -20V Drain current: -7A Anzahl je Verpackung: 2500 Stücke |
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BSO203PHXUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2P-CH 20V 7A 8DSO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 100µA Supplier Device Package: PG-DSO-8 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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BSO203PHXUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2P-CH 20V 7A 8DSO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 100µA Supplier Device Package: PG-DSO-8 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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BSO203PHXUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7A; 1.6W; PG-DSO-8 Mounting: SMD On-state resistance: 21mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: -20V Drain current: -7A |
Produkt ist nicht verfügbar |